Title

Enhancing the low temperature hydrogen sensitivity of nanocrystalline SnO2 as a function of trivalent dopants

Authors

Authors

C. Drake; A. Amalu; J. Bernard;S. Seal

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

OXIDE THIN-FILM; INFRARED ABSORPTION; GRAIN-GROWTH; NANOPARTICLES; CATALYSTS; GERMANIUM; SENSORS; Physics, Applied

Abstract

The effect of different indium doping concentrations on the room temperature hydrogen sensitivity of nano-SnO2 is investigated. The role of calcination temperature on the surface morphology, phase transformation, and subsequent impact on the gas sensing behavior of nanocrystalline doped SnO2 is presented. Differences in grain growth with varying doping amount give an explanation for enhanced sensing that is not always so obvious. Variation in the charge carrier density for indium doped nanocrystalline SnO2 is calculated as a function of indium concentration in the tin oxide lattice structure. The charge carrier density is correlated to the involved surface species of doped nanocrystalline SnO2 upon hydrogen gas exposure using Fourier transform infrared spectroscopy. (c) 2007 American Institute of Physics.

Journal Title

Journal of Applied Physics

Volume

101

Issue/Number

10

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

7

WOS Identifier

WOS:000246891500128

ISSN

0021-8979

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