Band gap energy modifications observed in trivalent In substituted nanocrystalline SnO2
Abbreviated Journal Title
Appl. Phys. Lett.
OXIDE THIN-FILM; OPTICAL-PROPERTIES; HYDROGEN SENSOR; NANOPARTICLES; SIZE; Physics, Applied
The effect of In doping concentration on the optical band gap of nano-SnO2 is investigated as a function of calcination temperature. Changes in the band gap explain the room temperature H-2 gas sensing of doped nano-SnO2. The band gap was found to be lower than those reported for SnO2 (3.6 eV) from 2.55 to 3.43 eV and may be explained by the presence of nonequilibrium oxygen vacancies in the oxide lattice and band bending effects at the nanoscale. (c) 2007 American Institute of Physics.
Applied Physics Letters
"Band gap energy modifications observed in trivalent In substituted nanocrystalline SnO2" (2007). Faculty Bibliography 2000s. 7069.