Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack
Abbreviated Journal Title
IEEE Electron Device Lett.
germanium (Ge); interface traps; low-frequency (LF) noise; oxide traps; pMOSFETs; HIGH-K GATE; 1/F NOISE; MOS-TRANSISTORS; HFO2; DIELECTRICS; MOSFETS; PERFORMANCE; INTERLAYERS; MOBILITY; BEHAVIOR; Engineering, Electrical & Electronic
The low-frequency noise of pMOSFETs fabricated in epitaxial germanium-on-silicon substrates is studied. The gate stack consists of a TiN/TaN metal gate on top of a 1.3-nm equivalent oxide thickness HfO2/SiO2 gate dielectric bilayer. The latter is grown by chemical oxidation of a thin epitaxial silicon film deposited to passivate the germanium surface. It is shown that the spectrum is of the 1/f(gamma) type, which obeys number fluctuations for intermediate gate voltage overdrives. A correlation between the low-field mobility and the oxide trap density derived from the 1/f noise magnitude and the interface trap density obtained from charge pumping is reported and explained by considering remote Coulomb scattering.
Ieee Electron Device Letters
"Low-frequency noise assessment of silicon passivated Ge pMOSFETs with TiN/TaN/HfO2 gate stack" (2007). Faculty Bibliography 2000s. 7190.