Title

Fabrication of nanogapped single-electron transistors for transport studies of individual single-molecule magnets

Authors

Authors

J. J. Henderson; C. M. Ramsey; E. del Barco; A. Mishra;G. Christou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

Physics, Applied

Abstract

Three-terminal single-electron transistor devices utilizing Al/Al(2)O(3) gate electrodes were developed for the study of electron transport through individual single-molecule magnets (SMMs). The devices were patterned via multiple layers of optical and electron beam lithography. Electromigration induced breaking of the nanowires reliably produces 1-3 nm gaps between which the SMM can be situated. Conductance through a single Mn(12) (3-thiophenecarboxylate) displays the Coulomb blockade effect with several excitations within +/- 40 meV.

Journal Title

Journal of Applied Physics

Volume

101

Issue/Number

9

Publication Date

1-1-2007

Document Type

Article; Proceedings Paper

Language

English

First Page

3

WOS Identifier

WOS:000246567900214

ISSN

0021-8979

Share

COinS