Title

Studies of electron trapping in GaN doped with carbon

Authors

Authors

O. Lopatiuk; L. Chernyak; Y. Feldman;K. Gartsman

Comments

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Abbreviated Journal Title

Thin Solid Films

Keywords

nitrides; semiconductors; luminescence; scanning electron microscopy; ACCEPTOR BINDING-ENERGIES; INJECTION; ALN; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

Abstract

Irradiation by the beam of the scanning electron microscope is shown to induce a systematic decay of the cathodoluminescence intensity in gallium nitride semiconductor doped with carbon. This decay is accompanied by increased electronic carrier diffusion length, indicating that electron irradiation results in the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energy for irradiation-induced effect of 210 meV. This observation is consistent with trapping of non-equilibrium electrons on deep, non-ionized carbon levels. (c) 2006 Elsevier B.V. All rights reserved.

Journal Title

Thin Solid Films

Volume

515

Issue/Number

10

Publication Date

1-1-2007

Document Type

Article; Proceedings Paper

Language

English

First Page

4365

Last Page

4368

WOS Identifier

WOS:000245167000012

ISSN

0040-6090

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