Title

Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN

Authors

Authors

O. Lopatiuk-Tirpak; L. Chernyaka; Y. L. Wang; F. Ren; S. J. Pearton;K. Gartsman

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

TRANSPORT; INJECTION; NITRIDE; Physics, Applied

Abstract

The electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole concentrations of 2x10(16), 9x10(16), 3x10(18), and 7x10(18) cm(-3), respectively. This carrier concentration dependence of the activation energy for the effects of electron irradiation was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in the irradiation-induced diffusion length increase.

Journal Title

Applied Physics Letters

Volume

91

Issue/Number

9

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000249156100054

ISSN

0003-6951

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