Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
TRANSPORT; INJECTION; NITRIDE; Physics, Applied
Abstract
The electron irradiation-induced increase of minority carrier diffusion length was studied as a function of hole concentration in Mg-doped GaN. Variable-temperature electron beam induced current measurements yielded activation energies of 264, 254, 171, and 144 meV for samples with hole concentrations of 2x10(16), 9x10(16), 3x10(18), and 7x10(18) cm(-3), respectively. This carrier concentration dependence of the activation energy for the effects of electron irradiation was found to be consistent with Mg acceptors, indicating the involvement of the latter levels in the irradiation-induced diffusion length increase.
Journal Title
Applied Physics Letters
Volume
91
Issue/Number
9
Publication Date
1-1-2007
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Lopatiuk-Tirpak, O.; Chernyak, L.; Wang, Y. L.; Ren, F.; Pearton, S. J.; and Gartsman, K., "Doping level dependence of electron irradiation-induced minority carrier diffusion length increase in Mg-doped GaN" (2007). Faculty Bibliography 2000s. 7373.
https://stars.library.ucf.edu/facultybib2000/7373
Comments
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