Influence of electron injection on the temporal response of ZnO homojunction photodiodes
Abbreviated Journal Title
Appl. Phys. Lett.
P-TYPE ZNO; Physics, Applied
The effects of solid-state electron injection on the peak amplitude and decay time of photosignal in a ZnO-based homojunction UV photodiode were studied using temporal photoresponse measurements under femtosecond pulses of 355 nm radiation. The injection of about 50 C of charge, carried out by applying forward bias to the junction, resulted in a nearly twofold increase of the peak photoresponse and a corresponding increase of the decay constant. Both observations are shown to be a consequence of electron trapping. The long-term stability of the induced changes is also discussed. (C) 2007 American Institute of Physics.
Applied Physics Letters
"Influence of electron injection on the temporal response of ZnO homojunction photodiodes" (2007). Faculty Bibliography 2000s. 7374.