Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures
Abbreviated Journal Title
J. Nanoelectron. Optoelectron.
terahertz; far-infrared; laser; germanium; gallium arsenide; P-GE LASER; WAVELENGTH SELECTION; TERAHERTZ RADIATION; CAVITY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
This paper reviews, compares, and contrasts recent gain calculations for a laser concept in delta-doped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities.
Journal of Nanoelectronics and Optoelectronics
"Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures" (2007). Faculty Bibliography 2000s. 7515.