Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
ALLOY-FILMS; BAND-GAP; ZNO; MGXZN1-XO; EPITAXY; GROWTH; DIODES; Physics, Applied
Abstract
The thermal stability of CdZnO/ZnO multi-quantum-well (MQW) structures was studied using rapid thermal annealing in nitrogen from 300 to 750 degrees C. Photoluminescence (PL) emission from the MQWs was studied while varying the annealing temperature and time. For 15 min annealings, the PL center wavelength showed a 7 nm reduction for temperatures up to 650 degrees C. Above 650 degrees C, the wavelength changed rapidly, with a 50 nm reduction at 750 degrees C. Annealing at 700 degrees C for up to 20 min produced a systematic reduction in PL wavelength up to 39 nm. The data suggest that CdZnO/ZnO MQWs are relatively stable for nitrogen annealing below 650 degrees C for times up to 15 min.
Journal Title
Applied Physics Letters
Volume
91
Issue/Number
20
Publication Date
1-1-2007
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Thompson, A. V.; Boutwell, C.; Mares, J. W.; Schoenfeld, W. V.; Osinsky, A.; Hertog, B.; Xie, J. Q.; Pearton, S. J.; and Norton, D. P., "Thermal stability of CdZnO/ZnO multi-quantum-wells" (2007). Faculty Bibliography 2000s. 7715.
https://stars.library.ucf.edu/facultybib2000/7715
Comments
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