Title

On the origin of the 1/f noise in shallow germanium p(+)-n junctions

Authors

Authors

R. M. Todi; S. Sonde; E. Simoen; C. Claeys;K. B. Sundaram

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

LOW-FREQUENCY NOISE; P-N-JUNCTIONS; DIODES; BEHAVIOR; IMPACT; Physics, Applied

Abstract

The low-frequency noise of shallow germanium p(+)-n junctions is studied, for diodes with or without a nickel-germanide Ohmic contact. It is shown that the application of NiGe not only reduces the series resistance, resulting in a higher forward current, but also results in a lower 1/f noise at forward bias. From the observed geometry dependence, it is concluded that germanidation suppresses the 1/f noise generated in the series resistance, leaving surface-state-assisted generation-recombination at the junction perimeter as the dominant flicker noise source. (c) 2007 American Institute of Physics.

Journal Title

Applied Physics Letters

Volume

90

Issue/Number

4

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000243789600101

ISSN

0003-6951

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