Amorphous-SiCBN-B ased metal-semiconductor-metal photodetector for high-temperature applications
Abbreviated Journal Title
IEEE Electron Device Lett.
high temperature; metal-semiconductor-metal (MSM); photodetector (PD); SiCBN; RAY PHOTOELECTRON-SPECTROSCOPY; THIN-FILMS; Engineering, Electrical & Electronic
A photodetector (PD) with metal-semiconductor-metal (MSM) structure has been developed using an amorphous SiCBN film. The amorphous SiCBN film was deposited on the silicon substrate using reactive RF magnetron sputtering. The optoelectronic performance of the SiCBN MSM devices has been examined through photocurrent measurements. Temperature effect, with respect to photocurrent ratios, has been studied. The detector sensitivity factor, which is determined through the PD current ratio, was greater than five at room temperature. Furthermore, the device showed an excellent current sensitivity factor that is greater than two even at a higher temperature of 200 degrees C. The improved performance of the device at higher temperatures could open avenues for high-temperature PD applications.
Ieee Electron Device Letters
"Amorphous-SiCBN-B ased metal-semiconductor-metal photodetector for high-temperature applications" (2007). Faculty Bibliography 2000s. 7750.