Title

Reliability study of ultrathin oxide films subject to irradiation-then-stress treatment using conductive atomic force microscopy

Authors

Authors

Y. L. Wu; S. T. Lin; T. M. Chang;J. J. Liou

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

INDUCED LEAKAGE CURRENT; THIN GATE OXIDES; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

In this work, we investigated the reliability of ultrathin silicon dioxide films subject to an irradiation-then-stress treatment using for the first time a conductive atomic force microscopy (AFM). We found that the conductive AFM gives accurate and reliable characterization of the pre- and post-treatment of oxide films. Based on the conductive AFM measured I-V curves, we concluded that the increased number of defects generated in the oxide bulk is the main mechanism contributing to the oxide degradation after the irradiation-then-stress treatment. (c) 2006 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

47

Issue/Number

2-3

Publication Date

1-1-2007

Document Type

Article

Language

English

First Page

419

Last Page

421

WOS Identifier

WOS:000244598900038

ISSN

0026-2714

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