CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect
Abbreviated Journal Title
IEEE Trans. Electron Devices
CMOS oscillators; dielectric breakdown (BD); fast transient charge; effect; leakage current; low-noise amplifier (LNA); reliability; OXIDE BREAKDOWN; VOLTAGE STRESS; RF PERFORMANCE; MOS DEVICES; MODEL; RELIABILITY; DIELECTRICS; EXTRACTION; SILICON; IMPACT; Engineering, Electrical & Electronic; Physics, Applied
The gate leakage current of HfO2 MOSFETs exhibits the power law characteristics after soft breakdown (BD) and the linear behaviour after hard BD. Fast transient charge-trapping effect (FTCTE) shifts the inverter transfer characteristics but does not affect the high and low output voltages. The ring oscillator remains functional after gate BD. The BD position near the drain end of the n-channel transistor increases the noise figure (NF) significantly, whereas FTCTE has minor impact on the NF of the folded cascode low-noise amplifier.
Ieee Transactions on Electron Devices
"CMOS device and circuit degradations subject to HfO2 gate breakdown and transient charge-trapping effect" (2007). Faculty Bibliography 2000s. 8.