Title
RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology
Abbreviated Journal Title
IEEE Trans. Microw. Theory Tech.
Keywords
CMOS; constant voltage stress; hot carriers; low-noise amplifier; power; amplifier; scattering parameters; soft breakdown; Engineering, Electrical & Electronic
Abstract
A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD) and hot-carrier (HC) stress is presented in this paper. DC and RE characteristics before and after stress are extracted from the experimental data. The effects of SBD and HC stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data.
Journal Title
Ieee Transactions on Microwave Theory and Techniques
Volume
49
Issue/Number
9
Publication Date
1-1-2001
Document Type
Article; Proceedings Paper
Language
English
First Page
1546
Last Page
1551
WOS Identifier
ISSN
0018-9480
Recommended Citation
"RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology" (2001). Faculty Bibliography 2000s. 8087.
https://stars.library.ucf.edu/facultybib2000/8087
Comments
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