RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology
Abbreviated Journal Title
IEEE Trans. Microw. Theory Tech.
CMOS; constant voltage stress; hot carriers; low-noise amplifier; power; amplifier; scattering parameters; soft breakdown; Engineering, Electrical & Electronic
A systematic study of RF circuit performance degradation subject to oxide soft breakdown (SBD) and hot-carrier (HC) stress is presented in this paper. DC and RE characteristics before and after stress are extracted from the experimental data. The effects of SBD and HC stress on s-parameters, cutoff frequency, third-order interception point, and noise parameters are examined. The performance drifts of gain, noise figure, linearity, and input matching of the RF low-noise amplifier are demonstrated by SpectreRF simulation results based on measured device data.
Ieee Transactions on Microwave Theory and Techniques
Article; Proceedings Paper
"RF circuit performance degradation due to soft breakdown and hot-carrier effect in deep-submicrometer CMOS technology" (2001). Faculty Bibliography 2000s. 8087.