Title
New approach for defining the threshold voltage of MOSFETs
Abbreviated Journal Title
IEEE Trans. Electron Devices
Keywords
Engineering, Electrical & Electronic; Physics, Applied
Abstract
The threshold voltage of MOSFETs has traditionally been defined as the gate voltage required to cause the surface potential to be equal to twice the Fermi potential in the bulk of semiconductor. Such a definition, although widely used for modeling long-channel MOSFET's, becomes increasingly questionable for modern devices with diminishing channel lengths, In this paper a new approach is proposed which defines the threshold voltage based on the intersection of the two asymptotes of the surface potential for the depletion and strong inversion regions. The approach is tested in simulation environment for MOS devices having different channel lengths, oxide thicknesses, and substrate doping concentrations.
Journal Title
Ieee Transactions on Electron Devices
Volume
48
Issue/Number
4
Publication Date
1-1-2001
Document Type
Article
DOI Link
Language
English
First Page
809
Last Page
813
WOS Identifier
ISSN
0018-9383
Recommended Citation
"New approach for defining the threshold voltage of MOSFETs" (2001). Faculty Bibliography 2000s. 8190.
https://stars.library.ucf.edu/facultybib2000/8190