Title
A generalized finite element method for hydrodynamic modeling of short-channel devices
Abbreviated Journal Title
VLSI Des.
Keywords
hydrodynamic model; device simulation; least squares finite element; SEMICONDUCTOR-DEVICES; EQUATIONS; Computer Science, Hardware & Architecture; Engineering, Electrical &; Electronic
Abstract
A finite element method based on the least-squares scheme is developed for hydrodynamic simulation of two-dimensional short-channel semiconductor devices. Although this general-purpose finite element method has been shown in fluid dynamics to be more universal to flow problems than other finite element approaches and has been applied in recent years to a wide range of problems in fluid dynamics, it is still unfamiliar to the semiconductor device community. Application of the developed hydrodynamic least squares finite element method (LSFEM) to simulation of a 2D MESFET with a deep-submicron gate has demonstrated its robustness and effectiveness for the hydrodynamic device simulation.
Journal Title
Vlsi Design
Volume
13
Issue/Number
1-4
Publication Date
1-1-2001
Document Type
Article; Proceedings Paper
DOI Link
Language
English
First Page
79
Last Page
84
WOS Identifier
ISSN
1065-514X
Recommended Citation
"A generalized finite element method for hydrodynamic modeling of short-channel devices" (2001). Faculty Bibliography 2000s. 8218.
https://stars.library.ucf.edu/facultybib2000/8218