Title

Multilevel sensitization of Er3+ in low-temperature-annealed silicon-rich SiO2

Authors

Authors

O. Savchyn; R. M. Todi; K. R. Coffey;P. G. Kik

Comments

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Abstract

The dynamics of Er3+ excitation in low-temperature-annealed Si-rich SiO2 are studied. It is demonstrated that Si-excess-related indirect excitation is fast (transfer time tau(tr)< 27 ns) and occurs into higher lying Er3+ levels as well as directly into the first excited state (I-4(13/2)). By monitoring the time-dependent Er3+ emission at 1535 nm, the multilevel nature of the Er3+ sensitization is shown to result in two types of excitation of the I-4(13/2) state: a fast excitation process (tau(tr)< 27 ns) directly into the I-4(13/2) level and a slow excitation process due to fast excitation into Er3+ levels above the I-4(13/2) level, followed by internal Er3+ relaxation with a time constant tau(32)>2.3 mu s. The fast and slow excitations of the I-4(13/2) level account for an approximately equal fraction of the excitation events: 45%-50% and 50%-55%, respectively.

Journal Title

Applied Physics Letters

Volume

93

Issue/Number

23

Publication Date

1-1-2008

Document Type

Article

WOS Identifier

WOS:000261699700069

ISSN

0003-6951

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