Title

Silicon microspheres for near-IR communication applications

Authors

Authors

A. Serpenguzel;A. Demir

Comments

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Abbreviated Journal Title

Semicond. Sci. Technol.

Keywords

STIMULATED RAMAN-SCATTERING; BEAM-SHAPE COEFFICIENTS; CHANNEL-DROPPING; FILTER; INSULATOR WAVE-GUIDE; LORENZ-MIE THEORY; ON-INSULATOR; LOCALIZED; APPROXIMATION; RIGOROUS JUSTIFICATION; OPTICAL MODULATOR; AXIS BEAMS; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter

Abstract

We have performed transverse electric and transverse magnetic polarized elastic light scattering calculations at 90 degrees and 0 degrees in the o-band at 1.3 mu m for a 15 mu m radius silicon microsphere with a refractive index of 3.5. The quality factors are on the order of 10(7) and the mode/channel spacing is 7 nm, which correlate well with the refractive index and the optical size of the microsphere. The 90 degrees elastic light scattering can be used to monitor a dropped channel (drop port), whereas the 0 degrees elastic scattering can be used to monitor the transmission channel (through port). The optical resonances of the silicon microspheres provide the necessary narrow linewidths that are needed for high-resolution optical communication applications. Potential telecommunication applications include filters, modulators, switches, wavelength converters, detectors, amplifiers and light sources. Silicon microspheres show promise as potential building blocks for silicon-based electrophotonic integration.

Journal Title

Semiconductor Science and Technology

Volume

23

Issue/Number

6

Publication Date

1-1-2008

Document Type

Article

Language

English

First Page

8

WOS Identifier

WOS:000255758900010

ISSN

0268-1242

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