Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit
Abbreviated Journal Title
BIAS TEMPERATURE INSTABILITY; GATE-OXIDE BREAKDOWN; HOT-CARRIER STRESS; PERFORMANCE DEGRADATION; CMOS TECHNOLOGY; SOFT BREAKDOWN; RELIABILITY; IMPACT; LOCATION; MODEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
The effects of gate and drain voltage stress and breakdown location on the class AB power amplifier and mixed-signal sample-hold circuit have been studied. The soft breakdown has minor effect on the performance of the power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces the power efficiency of the class AB power amplifier and degrades the signal to noise ratio of the sample-hold circuit significantly. Also, hot electron effect reduces the linearity of the class AB power amplifier. (C) 2010 Elsevier Ltd. All rights reserved
"Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit" (2010). Faculty Bibliography 2010s. 1004.