Title

Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances

Authors

Authors

J. S. Yuan; J. Ma; W. K. Yeh;C. W. Hsu

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Class-E power amplifier; Hot electron stress; LNA-mixer; Noise figure; Power efficiency; S-parameters; VOLTAGE STRESS; CARRIER STRESS; DEGRADATION; TRANSISTORS; TECHNOLOGY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Channel hot-electron-induced degradation on strained MOSFETs is examined experimentally. BSIM stressed model parameters are extracted from measurement and used in Cadence SpectreRF simulation to study the impact of channel hot electron stress on dual-band class-E power amplifier and integrated low-noise amplifier-mixer RF performances Channel hot electron effect decreases power efficiency of dual-band class-E power amplifier and increases the noise figure of low-noise amplifier-mixer combined circuit. (C) 2010 Elsevier Ltd All rights reserved

Journal Title

Microelectronics Reliability

Volume

50

Issue/Number

6

Publication Date

1-1-2010

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/j.microrel.2010.02.019

Language

English

First Page

807

Last Page

812

WOS Identifier

WOS:000278644400009

ISSN

0026-2714

Recommended Citation

"Impact of strain on hot electron reliability of dual-band power amplifier and integrated LNA-mixer RF performances" (2010). Faculty Bibliography 2010s. 1005.
https://stars.library.ucf.edu/facultybib2010/1005