Title

Adaptive Gate Bias for Power Amplifier Temperature Compensation

Authors

Authors

S. Y. Chen;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Bias circuit; hot electron; mixed-mode simulation; output power; power-added efficiency; power amplifier (PA); self-heating; temperature; compensation; DEVICE SIMULATION; CMOS CIRCUITS; STRAINED-SI; MOSFETS; MOBILITY; IMPACT; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Mixed-mode device and circuit simulation is used to examine device self-heating during power amplifier (PA) transient response. Lattice temperature increases with time and eventually saturates beyond the thermal time constant. Temperature variation on the effect of PA performances has been modeled and analyzed. Different gate biasing schemes that reduce the temperature drift of PA output power and power-added efficiency are evaluated. A simple adaptive gate bias technique effectively provides temperature compensation of PA performances over a wide range of temperatures.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

11

Issue/Number

3

Publication Date

1-1-2011

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/tdmr.2011.2160264

Language

English

First Page

442

Last Page

449

WOS Identifier

WOS:000294856900011

ISSN

1530-4388

Recommended Citation

"Adaptive Gate Bias for Power Amplifier Temperature Compensation" (2011). Faculty Bibliography 2010s. 1164.
https://stars.library.ucf.edu/facultybib2010/1164