Title

Development of a New pHEMT-Based Electrostatic Discharge Protection Structure

Authors

Authors

Q. Cui; C. S. Cheng; J. J. Liou;H. C. Chiu

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Charged device model (CDM); electrostatic discharge (ESD); high-electron; mobility transistor (HEMT); human body model (HBM); Engineering, Electrical & Electronic; Physics, Applied

Abstract

Electrostatic discharge (ESD) protection structures in the GaAs technology are commonly constructed using enhancement-mode single-gate (SG) pseudomorphic high-electron mobility transistor (pHEMT) devices. This paper develops an improved ESD protection clamp based on a novel multigate pHEMT. With approximately the same layout area, the proposed ESD protection clamp can carry an ESD current three times higher than the conventional SG pHEMT clamp under the human body model stress. Moreover, the new ESD clamp shows promising results when characterized under the charged device model stress. The parasitic capacitance of the new ESD clamp is also measured to assess its suitability for high-frequency ESD applications.

Journal Title

Ieee Transactions on Electron Devices

Volume

58

Issue/Number

9

Publication Date

1-1-2011

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/ted.2011.2152843

Language

English

First Page

2974

Last Page

2980

WOS Identifier

WOS:000294175900023

ISSN

0018-9383

Recommended Citation

"Development of a New pHEMT-Based Electrostatic Discharge Protection Structure" (2011). Faculty Bibliography 2010s. 1221.
https://stars.library.ucf.edu/facultybib2010/1221