Title

A continuous semi-empiric transfer characteristics model for surrounding gate undoped polysilicon nanowire MOSFETs

Authors

Authors

F. J. Garcia-Sanchez; A. D. Latorre-Rey; W. Liu; W. C. Chen; H. C. Lin; J. J. Liou; J. Muci;A. Ortiz-Conde

Comments

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Abbreviated Journal Title

Solid-State Electron.

Keywords

Nanowire MOSFETs; Polysilicon; Compact model; Lambert function; Parameter extraction; THIN-FILM TRANSISTORS; LAMBERT-W-FUNCTION; THRESHOLD VOLTAGE; SUBTHRESHOLD BEHAVIOR; COMPACT MODEL; SOI MOSFETS; CHANNEL; FABRICATION; EXTRACTION; SIMULATION; Engineering, Electrical & Electronic; Physics, Applied; Physics, ; Condensed Matter

Abstract

A new continuous semi-empiric compact model for the current transfer characteristics of surrounding gate undoped polycrystalline silicon (Poly-Si) nanowire (NW) MOSFETs is proposed. The model consists of a single equation based on the Lambert function, which contains only four parameters and is continuously valid and fully differentiable throughout weak and strong conduction regimes of operation. The model is tested on measured transfer characteristics of experimental devices. The extracted model parameters are used to generate transfer characteristics playbacks that are then compared to the measured data to validate the proposed model's adequacy for these devices. (C) 2011 Elsevier Ltd. All rights reserved.

Journal Title

Solid-State Electronics

Volume

63

Issue/Number

1

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

22

Last Page

26

WOS Identifier

WOS:000295066400006

ISSN

0038-1101

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