Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses
Abbreviated Journal Title
IEEE Trans. Electron Devices
Charged device model (CDM); gate oxide breakdown (GOB); power law (PL); time-dependent dielectric breakdown (TDDB); very fast transmission line; pulse (VFTLP); POWER-LAW; RELIABILITY; DIELECTRICS; SIO2-FILMS; Engineering, Electrical & Electronic; Physics, Applied
A reliable dielectric breakdown model under transient stresses via an extension of the power law is demonstrated. The model, which is based on the percolation model and the assumption of no significant detrapping, is successfully used in ramped voltage stress breakdown analysis. A demonstration of the model's validity consists of applying repetitive time-variant voltage waveforms-pulses, sine waves, ramps, and noise-until breakdown and, consequently, comparing prediction to reality. The breakdown distribution is initially derived from DC measurements, with the model predicting both the center and the shape of the distribution.
Ieee Transactions on Electron Devices
"Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses" (2010). Faculty Bibliography 2010s. 139.