Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress
Abbreviated Journal Title
J. Appl. Phys.
GATE OXIDE RELIABILITY; DEPENDENCE; Physics, Applied
Ultrathin silicon oxide film for nano-electromechanical system (NEMS) applications is investigated under electrostatic discharge (ESD) stress using a transmission line pulse (TLP) tester. The measured breakdown voltage and transient response are analyzed. The results show that the voltage stress time has a significant effect on the breakdown voltage. By shortening the stress time, the breakdown voltage increases by 2-3 times. With the area shrinking breakdown voltage increases, and there is a critical value, below which the breakdown voltage increases dramatically with decreasing area. It is possible to enhance the ESD robustness by using a multiple small-area dielectric layer structure. Shorten ESD pulse rise-time induces a higher overshoot current and then accelerates oxide failure, resulting in a lower breakdown voltage for a faster pulse. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633527]
Journal of Applied Physics
"Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress" (2011). Faculty Bibliography 2010s. 1437.