Title

Breakdown voltage of ultrathin dielectric film subject to electrostatic discharge stress

Authors

Authors

H. Jin; S. R. Dong; M. Miao; J. J. Liou;C. Y. Yang

Comments

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Abbreviated Journal Title

J. Appl. Phys.

Keywords

GATE OXIDE RELIABILITY; DEPENDENCE; Physics, Applied

Abstract

Ultrathin silicon oxide film for nano-electromechanical system (NEMS) applications is investigated under electrostatic discharge (ESD) stress using a transmission line pulse (TLP) tester. The measured breakdown voltage and transient response are analyzed. The results show that the voltage stress time has a significant effect on the breakdown voltage. By shortening the stress time, the breakdown voltage increases by 2-3 times. With the area shrinking breakdown voltage increases, and there is a critical value, below which the breakdown voltage increases dramatically with decreasing area. It is possible to enhance the ESD robustness by using a multiple small-area dielectric layer structure. Shorten ESD pulse rise-time induces a higher overshoot current and then accelerates oxide failure, resulting in a lower breakdown voltage for a faster pulse. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633527]

Journal Title

Journal of Applied Physics

Volume

110

Issue/Number

5

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000294968600152

ISSN

0021-8979

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