Title

High yield assembly and electron transport investigation of semiconducting-rich local-gated single-walled carbon nanotube field effect transistors

Authors

Authors

K. J. Kormondy; P. Stokes;S. I. Khondaker

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Nanotechnology

Keywords

DIELECTROPHORESIS; CIRCUITS; DENSITY; ARRAYS; LOGIC; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

Abstract

We report the fabrication and electron transport investigation of individual local-gated single-walled carbon nanotube field effect transistors (SWNT-FET) with high yield using a semiconducting-rich carbon nanotube solution. The individual semiconducting nanotubes were assembled at the selected position of the circuit via dielectrophoresis. Detailed electron transport investigations on 70 devices show that 99% display good FET behavior, with an average threshold voltage of 1 V, subthreshold swing as low as 140 mV/dec, and on/off current ratio as high as 8 x 10(5). The high yield directed assembly of local-gated SWNT-FET will facilitate large scale fabrication of CMOS (complementary metal-oxide-semiconductor) compatible nanoelectronic devices.

Journal Title

Nanotechnology

Volume

22

Issue/Number

41

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000295163900006

ISSN

0957-4484

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