Minority carrier transport in p-ZnO nanowires
Abbreviated Journal Title
J. Appl. Phys.
ZINC-OXIDE; THIN-FILMS; PHOSPHORUS; Physics, Applied
In this work, we explore the minority carrier diffusion length in zinc oxide nanowires, using the electron beam-induced current technique. Systematic measurements as a function of temperature were performed on p-type, Sb-doped ZnO film, containing a 4 mu m thick nanowire layer. The minority carrier diffusion length exhibits a thermally activated increase with the energy of 74 +/- 5 meV. Electron beam irradiation also causes the diffusion length increase with the activation energy of 247 +/- 10 meV, likely related to Sb(Zn)-2V(Zn) acceptor-complex. (C) 2011 American Institute of Physics. [doi:10.1063/1.3530732]
Journal of Applied Physics
"Minority carrier transport in p-ZnO nanowires" (2011). Faculty Bibliography 2010s. 1565.