Properties of Si:V Annealed under Enhanced Hydrostatic Pressure
Abbreviated Journal Title
Acta Phys. Pol. A
SILICON; CR; Physics, Multidisciplinary
It is known that processing of silicon implanted with vanadium, Si:V, at high temperature-pressure, HT-HP, can lead to magnetic ordering within the V-enriched area. New data concerning structure of Si:V (prepared using V(+) doses, D = (1-5) x 10(15) cm(-2), and energy, E = 200 keV), as implanted and processed for up to 10 h at HT <= 1400 K under enhanced hydrostatic pressure, HP <= 1.1 GPa, are presented. In effect of implantation, amorphous (a-Si) area is produced near range of implanted species. Transmission electron microscopy, secondary ion mass spectrometry, X-ray, and synchrotron methods were used for sample characterisation. At HT-HP the a-Si layer is subjected to solid phase epitaxial re-growth. Depending on HP, distinct solid phase epitaxial re-growth and formation of VSi(2) are observed at HT >= 720 K. HP applied at processing results in the improved solid phase epitaxial re-growth in Si:V. This can be related, among others, to the effect of HP on diffusivity of V(+) and of implantation-induced point defects. Our results can be useful for development of the new family of diluted magnetic semiconductors.
Acta Physica Polonica A
Article; Proceedings Paper
"Properties of Si:V Annealed under Enhanced Hydrostatic Pressure" (2011). Faculty Bibliography 2010s. 1674.