Boron clustering in implanted NiSi
Abbreviated Journal Title
Ni-suilcides; Implantation; Boron; Cluster; SILICIDED METAL GATES; DIFFUSION; SEGREGATION; DOPANTS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering
B redistribution in a B-implanted polycrystalline NiSi layer has been investigated using atom probe tomography and secondary ion mass spectrometry. The B accumulations observed at the SiO(2)/NiSi interface and in the NiSi bulk are due to B clustering. B cluster formation at these two locations is shown to have a major impact upon the entire B distribution observed after annealing. The formation of B clusters in the NiSi bulk may be due to implantation-related defects. (C) 2011 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
"Boron clustering in implanted NiSi" (2011). Faculty Bibliography 2010s. 1777.