Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires
Abbreviated Journal Title
J. Appl. Phys.
DIFFUSION LENGTH; GAN; Physics, Applied
Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 +/- 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 +/- 20 meV, indicating the possible involvement of a Sb(Zn)-2V(Zn) acceptor complex. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633224]
Journal of Applied Physics
"Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires" (2011). Faculty Bibliography 2010s. 1876.