Title

Impact of forward bias injection on minority carrier transport in p-type ZnO nanowires

Authors

Authors

C. Schwarz; E. Flitsiyan; L. Chernyak; V. Casian; R. Schneck; Z. Dashevsky; S. Chu;J. L. Liu

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

DIFFUSION LENGTH; GAN; Physics, Applied

Abstract

Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 144 +/- 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 217 +/- 20 meV, indicating the possible involvement of a Sb(Zn)-2V(Zn) acceptor complex. (C) 2011 American Institute of Physics. [doi:10.1063/1.3633224]

Journal Title

Journal of Applied Physics

Volume

110

Issue/Number

5

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000294968600168

ISSN

0021-8979

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