Title

Infrared surface plasmons on heavily doped silicon

Authors

Authors

M. Shahzad; G. Medhi; R. E. Peale; W. R. Buchwald; J. W. Cleary; R. Soref; G. D. Boreman;O. Edwards

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

RESONANCE; SILICIDES; GRATINGS; SENSORS; SI; Physics, Applied

Abstract

Conductors with infrared plasma frequencies are potentially useful hosts of surface plasmon polaritons (SPP) with sub-wavelength mode confinement for sensing applications. A challenge is to identify such a conductor that also has sharp SPP excitation resonances and the capability to be functionalized for biosensor applications. In this paper we present experimental and theoretical investigations of IR SPPs on doped silicon and their excitation resonances on doped-silicon gratings. The measured complex permittivity spectra for p-type silicon with carrier concentration 6 x 10(19) and 1 x 10(20) cm(-3) show that these materials should support SPPs beyond 11 and 6 mu m wavelengths, respectively. The permittivity spectra were used to calculate SPP mode heights above the silicon surface and SPP propagation lengths. Reasonable merit criteria applied to these quantities suggest that only the heaviest doped material has sensor potential, and then mainly within the wavelength range 6 to 10 mu m. Photon-to-plasmon coupling resonances, a necessary condition for sensing, were demonstrated near 10 mu m wavelength for this material. The shape and position of these resonances agree well with simple analytic calculations based on the theory of Hessel and Oliner (1965). (C) 2011 American Institute of Physics. [doi: 10.1063/1.3672738]

Journal Title

Journal of Applied Physics

Volume

110

Issue/Number

12

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

6

WOS Identifier

WOS:000298639800006

ISSN

0021-8979

Share

COinS