Title

ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

Authors

Authors

G. P. Wang; S. Chu; N. Zhan; Y. Q. Lin; L. Chernyak;J. L. Liu

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

SCATTERING; Physics, Applied

Abstract

ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements. (c) 2011 American Institute of Physics. [doi:10.1063/1.3551628]

Journal Title

Applied Physics Letters

Volume

98

Issue/Number

4

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000286676600007

ISSN

0003-6951

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