ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection
Abbreviated Journal Title
Appl. Phys. Lett.
SCATTERING; Physics, Applied
ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements. (c) 2011 American Institute of Physics. [doi:10.1063/1.3551628]
Applied Physics Letters
"ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection" (2011). Faculty Bibliography 2010s. 2069.