Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
SCATTERING; Physics, Applied
Abstract
ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.
Journal Title
Applied Physics Letters
Volume
98
Issue/Number
4
Publication Date
1-1-2011
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Wang, Guoping; Chu, Sheng; Zhan, Ning; Lin, Yuqing; Chernyak, Leonid; and Liu, Jianlin, "ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection" (2011). Faculty Bibliography 2010s. 2069.
https://stars.library.ucf.edu/facultybib2010/2069
Comments
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"This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in the linked citation and may be found originally at Applied Physics Letters."