Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films
Abbreviated Journal Title
Appl. Phys. Lett.
ALLOY THIN-FILMS; OPTICAL-PROPERTIES; DEPOSITION METHOD; MGXZN1-XO; OXIDE; EDGE; Physics, Applied
Amorphous Zn1-xMgxO (alpha-Zn1-xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz substrates. The amorphous property of the alpha-Zn1-xMgxO films was verified by x-ray diffraction, and atomic force microscopy revealed a smooth surface with sub-nanometer root-mean square roughness. The current phase segregation issue limiting application of crystalline Zn1-xMgxO with 38% < x < 75% was completely eliminated by growing amorphous films. Optical transmission measurements showed high transmissivity of more than 90% in the visible and near infrared regions, with optical bandgap tunability from 3.3 eV to more than 6.5 eV by varying the Mg content. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3604782]
Applied Physics Letters
"Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films" (2011). Faculty Bibliography 2010s. 2086.