Title

Bandgap engineering of sol-gel synthesized amorphous Zn1-xMgxO films

Authors

Authors

M. Wei; R. C. Boutwell; J. W. Mares; A. Scheurer;W. V. Schoenfeld

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

ALLOY THIN-FILMS; OPTICAL-PROPERTIES; DEPOSITION METHOD; MGXZN1-XO; OXIDE; EDGE; Physics, Applied

Abstract

Amorphous Zn1-xMgxO (alpha-Zn1-xMgxO) ternary alloy thin films across the full compositional range were synthesized by a low-cost sol-gel method on quartz substrates. The amorphous property of the alpha-Zn1-xMgxO films was verified by x-ray diffraction, and atomic force microscopy revealed a smooth surface with sub-nanometer root-mean square roughness. The current phase segregation issue limiting application of crystalline Zn1-xMgxO with 38% < x < 75% was completely eliminated by growing amorphous films. Optical transmission measurements showed high transmissivity of more than 90% in the visible and near infrared regions, with optical bandgap tunability from 3.3 eV to more than 6.5 eV by varying the Mg content. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3604782]

Journal Title

Applied Physics Letters

Volume

98

Issue/Number

26

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000292335700023

ISSN

0003-6951

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