Title

Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature

Authors

Authors

L. G. Zhang; Y. Fan; S. F. Xu; W. Y. Yang;L. N. An

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Nanosci. Nanotechnol.

Keywords

Silicon Nitride; Nanowires; Photoluminescence; Temperature; DANGLING-BOND CENTERS; THIN-FILMS; OPTICAL-PROPERTIES; VISIBLE; PHOTOLUMINESCENCE; POLYMERIC PRECURSOR; 1ST OBSERVATION; POINT-DEFECTS; MICROCAVITIES; NANOBELTS; CREATION; Chemistry, Multidisciplinary; Nanoscience & Nanotechnology; Materials; Science, Multidisciplinary; Physics, Applied; Physics, Condensed Matter

Abstract

The photoluminescence and temperature dependent emission spectra of silicon nitride nanowires were investigated by using femtosecond pulse laser. Three discrete sharp emission peaks were observed in photoluminescence, which were significantly different from that pumping by low excitation intensity laser. The temperature effects on emission peak energy were extracted using Gauss function, and should be attributed to volume-temperature effect and phonon effect.

Journal Title

Journal of Nanoscience and Nanotechnology

Volume

11

Issue/Number

11

Publication Date

1-1-2011

Document Type

Article

DOI Link

http://dx.doi.org/10.1166/jnn.2011.5285

Language

English

First Page

9795

Last Page

9798

WOS Identifier

WOS:000298765800083

ISSN

1533-4880

Recommended Citation

"Emission Evolution of alpha-Silicon Nitride Nanowires with Temperature" (2011). Faculty Bibliography 2010s. 2165.
https://stars.library.ucf.edu/facultybib2010/2165