Title

The effect of carbon nanotube/organic semiconductor interfacial area on the performance of organic transistors

Authors

Authors

N. Kang; B. K. Sarker;S. I. Khondaker

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

THIN-FILM TRANSISTORS; ENERGY-LEVEL ALIGNMENT; CONJUGATED POLYMERS; ELECTRODES; NANOTUBES; FABRICATION; INJECTION; EMISSION; DEVICES; METAL; Physics, Applied

Abstract

We show that the performance of pentacene transistors can be significantly improved by maximizing the interfacial area at single walled carbon nanotube (SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTs of different densities (0-30/mu m) to the Pd electrodes. The average mobility is increased three, six, and nine times for low, medium, and high SWCNT densities, respectively, compared to the devices with zero SWCNT. The current on-off ratio and on-current are increased up to 40 times and 20 times with increasing the SWCNT density. We explain the improved device performance using reduced barrier height of SWCNT/pentacene interface. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769439]

Journal Title

Applied Physics Letters

Volume

101

Issue/Number

23

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000312243900075

ISSN

0003-6951

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