Abbreviated Journal Title
J. Appl. Phys.
Keywords
OXIDATION; LAYERS; Physics, Applied
Abstract
P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.
Journal Title
Journal of Applied Physics
Volume
112
Issue/Number
8
Publication Date
1-1-2012
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0021-8979
Recommended Citation
Kasiyan, Vladimir; Dashevsky, Zinovi; Schwarz, Casey Minna; Shatkhin, M.; Flitsiyan, Elena; Chernyak, Leonid; and Khokhlov, Dmitry, "Infrared detectors based on semiconductor p-n junction of PbSe" (2012). Faculty Bibliography 2010s. 2837.
https://stars.library.ucf.edu/facultybib2010/2837
Comments
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