Title

Infrared detectors based on semiconductor p-n junction of PbSe

Authors

Authors

V. Kasiyan; Z. Dashevsky; C. M. Schwarz; M. Shatkhin; E. Flitsiyan; L. Chernyak;D. Khokhlov

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

J. Appl. Phys.

Keywords

OXIDATION; LAYERS; Physics, Applied

Abstract

P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759011]

Journal Title

Journal of Applied Physics

Volume

112

Issue/Number

8

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000310597500164

ISSN

0021-8979

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