Title

Manganese diffusion in monocrystalline germanium

Authors

Authors

A. Portavoce; O. Abbes; Y. Rudzevich; L. Chow; V. Le Thanh;C. Girardeaux

Comments

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Abbreviated Journal Title

Scr. Mater.

Keywords

Mn; Diffusion; Ge; Spintronics; SILICON; SPECTROSCOPY; GE; TEMPERATURE; PHOSPHORUS; SOLUBILITY; BORON; GOLD; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Metallurgy & Metallurgical Engineering

Abstract

The diffusion of a half monolayer of Mn deposited by molecular beam epitaxy on a Ge(0 0 1) substrate was studied via secondary ion mass spectrometry. Mn diffused in Ge under extrinsic conditions, exhibiting a solubility of 0.7-0.9%. All the Mn atoms were activated, occupying Ge substitutional sites and exhibiting a negative charge, in agreement with semiconductor doping theory. The diffusion mechanism being vacancy (V)-mediated, the formation of Mn-V pairs is suggested. Mn surface desorption occurred for temperatures >600 degrees C. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Journal Title

Scripta Materialia

Volume

67

Issue/Number

3

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

269

Last Page

272

WOS Identifier

WOS:000306256600012

ISSN

1359-6462

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