Title

Low-temperature (210 degrees C) deposition of crystalline germanium via in situ disproportionation of GeI2

Authors

Authors

D. T. Restrepo; K. E. Lynch; K. Giesler; S. M. Kuebler;R. G. Blair

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Mater. Res. Bull.

Keywords

Semiconductors; Inorganic compound; Halides; Vapor deposition; X-ray; diffraction; CHEMICAL-VAPOR-DEPOSITION; GROWTH; DIHALIDES; FILMS; Materials Science, Multidisciplinary

Abstract

A new approach is reported for depositing crystalline germanium films. The deposition occurs at low temperatures (210-260 degrees C) via in situ disproportionation of GeI2 and is thereby useful for depositing Ge onto a wide range of surfaces. Deposition onto glass and polymer substrates is demonstrated. The rate of deposition onto glass is found to be 25 ng min(-1). New synthetic routes to GeI2, GeI4, and Cu3Ge are also reported. These are valuable precursors for the synthesis of germanium nanostructures and organogermanium compounds. (C) 2012 Elsevier Ltd. All rights reserved.

Journal Title

Materials Research Bulletin

Volume

47

Issue/Number

11

Publication Date

1-1-2012

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/j.materresbull.2012.06.072

Language

English

First Page

3484

Last Page

3488

WOS Identifier

WOS:000311865200068

ISSN

0025-5408

Recommended Citation

"Low-temperature (210 degrees C) deposition of crystalline germanium via in situ disproportionation of GeI2" (2012). Faculty Bibliography 2010s. 3186.
https://stars.library.ucf.edu/facultybib2010/3186