Title

Uncovering the dominant scatterer in graphene sheets on SiO2

Authors

Authors

J. Katoch; J. H. Chen; R. Tsuchikawa; C. W. Smith; E. R. Mucciolo;M. Ishigami

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Phys. Rev. B

Keywords

BASAL-PLANE; HYDROGENATION; GRAPHITE; Physics, Condensed Matter

Abstract

We have measured the impact of atomic hydrogen adsorption on the electronic transport properties of graphene sheets as a function of hydrogen coverage and initial, pre-hydrogenation field-effect mobility. Our results are compatible with hydrogen adsorbates inducing intervalley mixing by exerting a short-range scattering potential. The saturation coverages for different devices are found to be proportional to their initial mobility, indicating that the number of native scatterers is proportional to the saturation coverage of hydrogen. By extrapolating this proportionality, we show that the field-effect mobility can reach 1.5 x 10(4) cm(2)/V s in the absence of the hydrogen-adsorbing sites. This affinity to hydrogen is the signature of the most dominant type of native scatterers in graphene-based field-effect transistors on SiO2.

Journal Title

Physical Review B

Volume

82

Issue/Number

8

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

4

WOS Identifier

WOS:000281295200004

ISSN

1098-0121

Share

COinS