Title

Oxidation Behavior of ZrB2-SiC-TaC Ceramics

Authors

Authors

Y. G. Wang; B. S. Ma; L. L. Li;L. N. An

Comments

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Abbreviated Journal Title

J. Am. Ceram. Soc.

Keywords

HIGH-TEMPERATURE CERAMICS; ZIRCONIUM DIBORIDE; TASI2 ADDITIVES; SILICON; RESISTANCE; POLYCARBOSILANE; COMPOSITES; OXYGEN; TAB2; ZRB2; Materials Science, Ceramics

Abstract

ZrB2SiCTaC ceramics with different content of TaC were prepared by hot-pressing at 1800 degrees C in vacuum environment. The oxidation behavior of these ceramics was studied in the temperature range of 1200 degrees C1500 degrees C in air. It was found that low concentration of TaC (10 similar to vol%) deteriorated the oxidation resistance of ZrB2SiC, while high concentration of TaC (30 similar to vol%) significantly improved the oxidation resistance of the ceramics. Reoxidation experiments indicated that the metallic species (tantalum and/or silicon) diffusing out of the materials into the oxides was initially involved in the controlling process.

Journal Title

Journal of the American Ceramic Society

Volume

95

Issue/Number

1

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

374

Last Page

378

WOS Identifier

WOS:000298735300061

ISSN

0002-7820

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