CMOS Transistor Amplifier Temperature Compensation: Modeling and Analysis
Abbreviated Journal Title
IEEE Trans. Device Mater. Reliab.
Gate biasing; low-noise amplifier (LNA); noise figure; temperature; compensation; variability; POWER-AMPLIFIER; MOBILITY; Engineering, Electrical & Electronic; Physics, Applied
The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the low-noise amplifier with temperature compensation can reduce temperature variation effect on the noise figure of the amplifier over a wide range of temperatures. Analytical equations to predict temperature compensation effect are also presented.
Ieee Transactions on Device and Materials Reliability
"CMOS Transistor Amplifier Temperature Compensation: Modeling and Analysis" (2012). Faculty Bibliography 2010s. 3557.