Title

Buried heterostructure vertical-cavity surface-emitting laser with semiconductor mirrors

Authors

Authors

G. Zhao; Y. Zhang; D. G. Deppe; K. Konthasinghe;A. Muller

Comments

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Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

OPTICAL MICROCAVITIES; PHOTONIC CRYSTAL; OPERATION; LINEWIDTH; VCSELS; MODE; Physics, Applied

Abstract

We report a buried heterostructure vertical-cavity surface-emitting laser fabricated by epitaxial regrowth over an InGaAs quantum well gain medium. The regrowth technique enables microscale lateral confinement that preserves a high cavity quality factor (loaded Q approximate to 4000) and eliminates parasitic charging effects found in existing approaches. Under optimal spectral overlap between gain medium and cavity mode (achieved here at T = 40 K), lasing was obtained with an incident optical power as low as P-th = 10mW (lambda(p) = 808 nm). The laser linewidth was found to be approximate to 3 GHz at P-p approximate to 5 P-th. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4750062]

Journal Title

Applied Physics Letters

Volume

101

Issue/Number

10

Publication Date

1-1-2012

Document Type

Article

Language

English

First Page

3

WOS Identifier

WOS:000309072800003

ISSN

0003-6951

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