GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application
Abbreviated Journal Title
Appl. Phys. Express
CARRIER DIFFUSION LENGTH; SPATIAL-RESOLUTION; PULSE TECHNIQUE; LAPS; CAPACITORS; PENICILLIN; NITRIDE; DEVICES; SILICON; Physics, Applied
Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si3N4 similar to 50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365 nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaN-based LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution. (C) 2013 The Japan Society of Applied Physics
Applied Physics Express
"GaN Thin Film Based Light Addressable Potentiometric Sensor for pH Sensing Application" (2013). Faculty Bibliography 2010s. 3856.