Title

Study of graphene field-effect transistors under electrostatic discharge stresses

Authors

Authors

S. R. Dong; L. Zhong; J. Zeng; W. Guo; H. W. Li; J. Wang; Z. G. Guo;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Electron. Lett.

Keywords

Engineering, Electrical & Electronic

Abstract

Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.

Journal Title

Electronics Letters

Volume

49

Issue/Number

17

Publication Date

1-1-2013

Document Type

Article

DOI Link

http://dx.doi.org/10.1049/el.2013.1865

Language

English

First Page

1086

Last Page

1087

WOS Identifier

WOS:000323552900027

ISSN

0013-5194

Recommended Citation

"Study of graphene field-effect transistors under electrostatic discharge stresses" (2013). Faculty Bibliography 2010s. 3901.
https://stars.library.ucf.edu/facultybib2010/3901