Study of graphene field-effect transistors under electrostatic discharge stresses
Abbreviated Journal Title
Engineering, Electrical & Electronic
Graphene field-effect transistors (GFETs) are characterised for the first time under electrostatic discharge stresses. The GFETs are measured from the transmission line pulsing (TLP) tester and very fast TLP (VFTLP) tester. The turn-on behaviour influenced by back gate voltage is investigated. The I-V curve of the GFETs shows no characteristic of snapback from TLP or VFTLP measurement.
"Study of graphene field-effect transistors under electrostatic discharge stresses" (2013). Faculty Bibliography 2010s. 3901.