Title

Epitaxial growth of a silicene sheet

Authors

Authors

B. Lalmi; H. Oughaddou; H. Enriquez; A. Kara; S. Vizzini; B. Ealet;B. Aufray

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

Physics, Applied

Abstract

Using atomic resolved scanning tunneling microscopy, we present here the experimental evidence of a silicene sheet (graphenelike structure) epitaxially grown on a close-packed silver surface [Ag(111)]. This has been achieved via direct condensation of a silicon atomic flux onto the single-crystal substrate in ultrahigh vacuum conditions. A highly ordered silicon structure, arranged within a honeycomb lattice, is synthesized and present two silicon sublattices occupying positions at different heights (0.02 nm) indicating possible sp(2)-sp(3) hybridizations. (C) 2010 American Institute of Physics. [doi:10.1063/1.3524215]

Journal Title

Applied Physics Letters

Volume

97

Issue/Number

22

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

2

WOS Identifier

WOS:000284965000070

ISSN

0003-6951

Share

COinS