Thermo-Mechanical Characterization of Au-In Transient Liquid Phase Bonding Die-Attach
Abbreviated Journal Title
IEEE Trans. Compon. Pack. Manuf. Technol.
Au-In; die-attach; high temperature; packaging; power semiconductor; reliability; shear strength; silicon carbide; solid liquid; interdiffusion; thermal cycling; transient liquid phase bonding; widebandgap; ROOM-TEMPERATURE; GOLD-INDIUM; INTERDIFFUSION; SYSTEMS; PACKAGES; Engineering, Manufacturing; Engineering, Electrical & Electronic; Materials Science, Multidisciplinary
Semiconductor die-attach techniques are critically important in the implementation of high-temperature wide-bandgap power devices. In this paper, thermal and mechanical characteristics of Au-In transient liquid phase (TLP) die-attach are examined for SiC devices. Samples with SiC diodes TLP-bonded to copper-metalized silicon nitride substrates are made using several different values for such fabrication properties as gold and indium thickness, Au/In ratio, and bonding pressure. The samples are then characterized for die-attach voiding, shear strength, and thermal impedance. It is found that the Au-In TLP-bonded samples offer a high average shear strength of 22.0 kgf and a low average thermal impedance of 0.35 K/W from the device junction through the substrate. It is also discovered that some of the fabrication properties have a greater influence on the bond characteristics than others. Overall, TLP bonding remains promising for high-temperature power electronic die-attach.
Ieee Transactions on Components Packaging and Manufacturing Technology
"Thermo-Mechanical Characterization of Au-In Transient Liquid Phase Bonding Die-Attach" (2013). Faculty Bibliography 2010s. 4061.