Title

Effects of anode materials on resistive characteristics of NiO thin films

Authors

Authors

Z. Jia; L. K. Wang; N. W. Zhang; T. L. Ren;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Appl. Phys. Lett.

Keywords

MEMORY RRAM DEVICES; OXIDE-FILMS; Physics, Applied

Abstract

This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4789523]

Journal Title

Applied Physics Letters

Volume

102

Issue/Number

4

Publication Date

1-1-2013

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000314723600058

ISSN

0003-6951

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