Si-CMOS compatible materials and devices for mid-IR microphotonics
Abbreviated Journal Title
Opt. Mater. Express
WAVE INFRARED REGION; SILICON; GUIDES; CHIP; PHOTOCONDUCTIVITY; DETECTORS; SENSORS; Materials Science, Multidisciplinary; Optics
CMOS compatible mid-Infrared (mid-IR) microphotonics including (1) broadband SOUP (Silicon on Oxide Undercladding Pedestal) waveguides; and (2) mid-IR transparent chalcogenide glass (ChGs) waveguides monolithically integrated with a PbTe thin film photodetector; are demonstrated. Using a pedestal undercladding geometry we obtain an optical loss for our Si waveguide which is 10 dB/cm lower compared to other waveguides using planar SiO2 cladding at lambda = 5 mu m, and a fundamental mode is seen over a broad mid-IR spectral range. To realize a fully integrated mid-IR on-chip system, in parallel, we develop PbTe thin film detectors that can be deposited on various mid-IR platforms through a thermal evaporation technique, offering high photoresponsivity of 25 V/W from lambda = 1 mu m to 4 mu m. The detector can be efficiently integrated, using a suitable spacer, to an underlying Chalcogenide glass (ChGs) waveguide. Our results of low loss waveguides and integrated thin film detectors enable Si-CMOS microphotonics for mid-IR applications. (c) 2013 Optical Society of America
Optical Materials Express
"Si-CMOS compatible materials and devices for mid-IR microphotonics" (2013). Faculty Bibliography 2010s. 4313.