Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure
Abbreviated Journal Title
Appl. Phys. Express
FIELD-EFFECT TRANSISTOR; SILICON-CARBIDE; SURFACE; PLASMA; IMMOBILIZATION; MEMBRANES; SHIELD; ENZYME; Physics, Applied
An electrolyte-insulator-semiconductor (EIS) structure with high-band-gap semiconductor of silicon carbide is demonstrated as a pH sensor in this report. Two different sensing membranes, i.e., gadolinium oxide (Gd2O3) and hafnium oxide (HfO2), were investigated. The HfO2 film deposited by atomic layer deposition (ALD) at low temperature shows high pH sensing properties with a sensitivity of 52.35 mV/pH and a low signal of 4.95mV due to light interference. The EIS structures with silicon carbide can provide better visible light immunity due to its high band gap that allows pH detection in an outdoor environment without degradation of pH sensitivity. (C) 2013 The Japan Society of Applied Physics
Applied Physics Express
"Light-Immune pH Sensor with SiC-Based Electrolyte-Insulator-Semiconductor Structure" (2013). Faculty Bibliography 2010s. 4314.